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this is information on a product in full production. march 2014 docid026116 rev 1 1/13 STT5N2VH5 n-channel 20 v, 0.025 ? typ., 5 a stripfet? v power mosfet in a sot23-6l package datasheet ? production data figure 1. internal schematic diagram features ? very low profile package ? conduction losses reduced ? switching losses reduced ? 2.5 v gate drive ? very low threshold device applications ? switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. 1 2 3 4 5 6 sot23-6l order code v ds r ds(on) max i d p tot STT5N2VH5 20 v 0.04 (v gs =2.5 v) 5 a 1.6 w table 1. device summary order code marking packages packaging STT5N2VH5 std1 sot23-6l tape and reel www.st.com
contents STT5N2VH5 2/13 docid026116 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid026116 rev 1 3/13 STT5N2VH5 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d (1) 1. this value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 5 a i d (1) drain current (continuous) at t pcb = 100 c 3.1 a i dm (1)(2) 2. pulse width is limited by safe operating area drain current (pulsed) 20 a p tot (1) total dissipation at t pcb = 25 c 1.6 w t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz cu, t< 10 sec. thermal resistance junction-pcb max 78 c/w
electrical characteristics STT5N2VH5 4/13 docid026116 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v 1 a v ds = 20 v, t c =125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 8 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a0.7 v r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 2 a 0.025 0.03 v gs = 2.5 v, i d = 2 a 0.031 0.04 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 16 v, f = 1 mhz, v gs = 0 - 367 - pf c oss output capacitance - 92 - pf c rss reverse transfer capacitance -16-pf q g total gate charge v dd = 16 v, i d = 2 a, v gs = 4.5 v (see figure 14 ) -4.6-nc q gs gate-source charge - 0.9 - nc q gd gate-drain charge - 1 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) voltage delay time v dd = 16 v, i d = 2 a, r g = 4.7 , v gs = 4.5 v (see figure 15 and figure 18 ) -4.8-ns t r (v) voltage rise time - 14.4 - ns t d (off) current fall time - 17 - ns t f crossing time - 4 - ns
docid026116 rev 1 5/13 STT5N2VH5 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 2 a, di/dt = 100 a/ s v dd = 16 v, t j = 150 c (see figure 18 ) -10 ns q rr reverse recovery charge - 24 nc i rrm reverse recovery current - 4.8 a
electrical characteristics STT5N2VH5 6/13 docid026116 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc = 2 5 c single pulse 100s 10 am18141v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -2 10 -1 10 -5 10 -3 10 -2 10 -1 10 0 pcb am18127v1 i d 20 12 4 0 0 1 v ds (v) 2 (a) 3 0.5v 1.5v v gs =2.5, 3.5, 4.5, 5.5, 6.5 v 8 16 4 am18128v1 i d 16 8 0 0 0.4 v gs (v) 0.8 (a) 0.2 0.6 1 4 12 20 v ds =4v 1.2 am18129v1 v gs 6 4 2 0 0 4 q g (nc) (v) v dd =10v i d =2a 2 6 am18130v1 r ds(on) 24.8 24.4 24 1 2 i d (a) (m ) 1.5 2.5 25.2 v gs =4.5v 3 3.5 25.6 26 am18132v1
docid026116 rev 1 7/13 STT5N2VH5 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics c 100 10 0 8 v ds (v) (pf) 4 12 ciss coss crss 16 am18133v1 v gs(th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) -30 0.8 70 20 45 95 i d =250a 120 1 1.2 am18134v1 r ds(on) 1.4 0.8 0.4 0 t j (c) (norm) 0.2 0.6 1 1.2 1.6 i d =2a v gs =10v -55 -5 -30 70 20 45 95 120 am18135v1 v (br)dss t j (c) (norm) 0.9 0.95 1 1.05 1.1 i d =1ma -55 -5 -30 70 20 45 95 120 am18136v1 v sd 0.5 2.5 i sd (a) (v) 1.5 3.5 4.5 0.3 0.4 0.5 0.6 t j =-55c t j =150c t j =25c 0.7 0.8 0.9 am18137v1
test circuits STT5N2VH5 8/13 docid026116 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026116 rev 1 9/13 STT5N2VH5 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STT5N2VH5 10/13 docid026116 rev 1 figure 19. sot23-6l package drawing 7049714_k
docid026116 rev 1 11/13 STT5N2VH5 package mechanical data 13 figure 20. sot23-6l recommended footprint (a) table 8. sot23-6l package mechanical data dim. mm min. typ. max. a 1.25 a1 0.00 0.15 a2 1.00 1.10 1.20 b 0.36 0.50 c 0.14 0.20 d 2.826 2.926 3.026 e 1.526 1.626 1.726 e 0.90 0.95 1.00 h 2.60 2.80 3.00 l 0.35 0.45 0.60 0 c 8 c a. all dimensions are in millimeters 7049714_k_footprint
revision history STT5N2VH5 12/13 docid026116 rev 1 5 revision history table 9. document revision history date revision changes 20-mar-2014 1 first release. part number previously included in datasheet docid023799
docid026116 rev 1 13/13 STT5N2VH5 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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